MOSFET N-CH 30V 4A SOT23-3L 

The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

30V P-Channel MOSFET

The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.

N-Channel Enhancement Mode Field Effect Transistor 

The AO3404A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. 

30V P-Channel MOSFET

The AO3407A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications.

30V P-Channel MOSFET 

The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications

20V P-Channel MOSFET

The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.

20V N-Channel MOSFET 

The AO3414 uses advanced trench technology to  provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.

N-Channel Enhancement Mode Field Effect Transistor 

 The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and  operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications....

20V P-Channel MOSFET 

The AO3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications.

20V N-Channel MOSFET 

The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected

20V P-Channel MOSFET   

The AO3419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications.

20V N-Channel MOSFET 

The AO3420 uses advanced trench technology to provide 20V excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load...

100V N-Channel MOSFET 

 The AO3442 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer,telecom, industrial power supplies and LED...

60V N-Channel MOSFET

 Trench Power MV MOSFET technology 60V

 • Low RDS(ON)

 • Low Gate Charge

 • ESD protected

 • AO4262E SO-8 Tape & Reel 3000    Applications

 • High efficiency power supply

 •...

60V N-Channel AlphaSGT 

• Trench Power AlphaSGTTM technology 

 • Low RDS(ON)

 • Low Gate Charge

 • ESD protected                                     ...

30V N-Channel AlphaMOS 

  • Latest Trench Power AlphaMOS (αMOS LV) technology

• Very Low RDS(on) at 4.5VGS

• Low Gate Charge

• High Current Capability

• RoHS and Halogen-Free Compliant   Application 

 • DC/DC Converters in...

20V N-Channel MOSFET 

• Trench Power MOSFET technology

 • Low RDS(ON)

 • RoHS and Halogen-Free Compliant  Applications   

• DC/DC Converters in Computing, Servers, and POL

 • Battery protection switch

30V N-Channel MOSFET

The AO4406A uses advanced trench technology toprovide excellent RDS(ON) with low gate charge.This device is suitable for high side switch in SMPS and general purpose applications

30V N-Channel MOSFET

The AO4406AL uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS an general purpose applications.

30V P-Channel MOSFET

The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. 

* RoHS and Halogen-Free Complain

30V P-Channel MOSFET

The AO4411 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.

30V P-Channel MOSFET 

 • Latest advanced trench technology

 • Low RDS(ON)

 • High Current Capability

 • RoHS and Halogen-Free Compliant                   

Applications     ...

200V N-Channel MOSFET 

 • Trench Power MV MOSFET 

• Low RDS(ON)

• Low Gate Charge

• Optimized for fast-switching applications                 

Applications             ...

40V N-Channel MOSFET                                             

The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high...

80V N-Channel MOSFET 

The AOD2810 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss....

100V N-Channel MOSFET 

The AOD2910 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss....

100V N-Channel MOSFET 

The AOD2916 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss....

30V P-Channel MOSFET

The AOD403/AOI403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications

P-Channel Enhancement Mode Field Effect Transistor 

The AOD407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load...