Bipolar (BJT) Transistor NPN 20V 500mA 350MHz 300mW Through Hole SPT
Features
1) High DC current gain. hFE = 1200 (Typ.)
2) High emitter-base voltage. VEBO = 12V (Min.)
3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)
USD
- USD
- CNY
- HKD
- EUR
English
- العربية
- čeština
- dansk
- Deutsch
- Ελληνικά
- English
- Español
- Français
- ic
- Italiano
- Netherlands
- norsk Språk
- język polski
- pt
- Português
- 中文
Transistors (BJT) - Single
2SD2144STPV
2SD2144STPV
Subscribe to get pricesModel: 2SD2144STPV
Order No:
SKU: 10000075176801
Condition: New Sealed Under Guarantee
Size: 0.00 cm，0.00 cm，0.00 cm
Weight: 0.00kg
Product Selection Engineer：ziyan
In Stock
Brief Introduction
2SD2144STPV
<p>Bipolar (BJT) Transistor NPN 20V 500mA 350MHz 300mW Through Hole SPT</p><p>Features</p><p>1) High DC current gain. hFE = 1200 (Typ.)</p><p>2) High emitter-base voltage. VEBO = 12V (Min.)</p><p>3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)</p>
Description
Unsubscribe
Subscribe
Subscription successful
Price list will be sent to you by email within 24hrs.